ComputerSalg.de : Samsung 970 EVO Plus, 1000 GB, M.2, 3500 MB/s

Samsung 970 EVO Plus, 1000 GB, M.2, 3500 MB/s

Item no.: [5019674] | Manufacturer: Samsung | Model no.: MZ-V7S1T0BW | EAN: 8801643628086

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EUR 173,26
ex. VAT 145,60
Total incl. delivery 184,86
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Always Evolving SSD
The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW.

Level Up Performance
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53%‡ faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimised firmware, a proven Phoenix controller and Intelligent TurboWrite boost.

Design Flexibility
The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung’s innovative technology empowers you with the capacity to do more and accomplish more.

Unparalleled Reliability
Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimise performance drops.

Samsung Magician
Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health, check speed and even boost performance.
  • Specifications
  • Specifications - Extended
ProduktbeskrivelseSamsung 970 EVO Plus MZ-V7S1T0BW - solid state drive - 1 TB - PCI Express 3.0 x4 (NVMe)
TypeSolid state drive - intern - TRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller
Kapacitet1 TB
Hardware krypteringJa
Krypterings algoritme256-bit AES
NAND Flashhukommelses-typeTredobbelt-niveau celle (TLC)
ModelM.2 2280
GrænsefladePCI Express 3.0 x4 (NVMe)
Buffer størrelse1 GB
EgenskaberTRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Dimensioner (B x D x H)22.15 mm x 80.15 mm x 2.38 mm
Vægt8 g
Producentgaranti5 års garanti
Generelt
EnhedstypeSolid state drive - intern
Kapacitet1 TB
Hardware krypteringJa
Krypterings algoritme256-bit AES
NAND Flashhukommelses-typeTredobbelt-niveau celle (TLC)
ModelM.2 2280
GrænsefladePCI Express 3.0 x4 (NVMe)
Buffer størrelse1 GB
EgenskaberTRIM support, Auto Garbage Collection Algorithm, Dynamic Thermal Guard protection, TurboWrite Technology, V-NAND Technology, NVM Express (NVMe) 1.3, Samsung Phoenix Controller, S.M.A.R.T.
Bredde22.15 mm
Dybde80.15 mm
Højde2.38 mm
Vægt8 g
Præstation
SSD-udholdenhed600 TB
Intern datahastighed3500 MBps (læs) / 3300 MBps (skriv)
4KB Random Read19000 IOPS
4KB Random Write60000 IOPS
Maximum 4KB Random Write550000 IOPS
Maksimal 4 KB tilfældig læsning600000 IOPS
Driftssikkerhed
MTBF (forventet tid mellem fejl)1,500,000 timer
Ekspansion og forbindelse
InterfacePCI Express 3.0 x4 (NVMe) - M.2 Card
Kompatibel båsM.2 2280
Effekt
Strømforbrug6 Watt (gennemsnitlig)
9 Watt (maksimum)
30 mW (ledigt maks.)
Diverse
OverensstemmelsesstandarderIEEE 1667
Producentgaranti
Service & SupportBegrænset garanti - 5 år
Miljømæssige parametre
Min. driftstemperatur0 °C
Maks. driftstemperatur70 °C
Modstandsdygtighed over for stød (operativ)1500 g @ 0,5 ms halv-sinus